Wide-Bandgap Device Enabled Multilevel Converters With Simplified Structures and Capacitor Voltage Balancing Capability
نویسندگان
چکیده
This paper aims to point out and demonstrate the opportunities enabled by wide-bandgap (WBG) devices for multilevel converters, contributing international technology roadmap WBG power semiconductors (ITRW). The emergence of silicon carbide (SiC) gallium nitride (GaN) offers new push boundaries converter performances. Featuring high single-device blocking voltage ultra-low switching loss, can enable a group converters with simplified structures higher number levels be practically implemented in applications various levels. highlights how use reduce required topologies, capacitor balance achieved newly proposed redundant level modulation (RLM) loss frequency efficiency improved converters. A 1.2 kV/100 kW, three-phase demonstrator four-level active neutral clamped (ANPC) structure commercial SiC modules is studied show brought balancing scheme based on RLM analysis are presented this configuration.
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ژورنال
عنوان ژورنال: IEEE open journal of power electronics
سال: 2021
ISSN: ['2644-1314']
DOI: https://doi.org/10.1109/ojpel.2021.3094713